模拟和接』口芯片

CRTD700P10L

Trench P-MOSFET -100V, 59mΩ, -26A

Features Product Summary ? Uses CRM(CQ) advanced Trench technology ? Extremely low on-resistance RDS(on) RDS(on) typ. ? Excellent QgxRDS(on) product(FOM) ? Qualified according to JEDEC criteria Applications ? Motor control and drive ? Battery management ? UPS (Uninterrupible Power Supplies) VDS -100V 59mΩ ID -26A 100% Avalanche Tested 100% DVDS Tested Package Marking and Ordering Information Packing Absolute Maximum Ratings -55...+150 mJ °C Avalanche energy, single pulse (L=0.5mH, Rg=25?) EAS VGS Part # CRTD700P10L Qty 2500pcs Tape Width N/A Reel Size N/A Marking CRTD700P10L Package A Gate-Source voltage V ID A Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Symbol Unit V -26 -80 -17 VDS Value -100 -104 42 ±20 Ptot 102 Tj , T stg TO-252 Reel Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature wave soldering only allowed at leads ID pulse W 100% Avalanche Tested 100% DVDS Tested Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) T

? Motor control and drive ? Battery management ? UPS (Uninterrupible Power Supplies